Electroluminescence device, electroluminescence apparatus, and production methods thereof

ABSTRACT

An electroluminescence device having a transistor substrate comprising drain electrode pads, each being connected to a drain of a thin film transistor, and capacitors connected to the respective drain electrode pads, and an electroluminescence substrate comprising pairs of electrodes and electroluminescence members each provided between a pair of electrodes, arranged along a plurality of rows and columns, wherein the thin film transistor substrate and the electroluminescence substrate are placed opposite to each other so that the drain electrode pads and the electroluminescence members are opposed to each other, and wherein each drain electrode pad and one electrode of a pair of electrodes are connected through an adhesive electric connection member.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an electroluminescence device and anelectroluminescence apparatus applicable to display devices,light-emitting sources, or printer heads of electrophotographicprinters, and methods for producing them. More particularly, theinvention relates to a device and an apparatus using organicelectroluminescence members suitable for full-color display of largescreen, and methods for producing them.

2. Related Background Art

The known organic electroluminescence members are, for example, thosedisclosed in Japanese Laid-Open Patent Applications No. 6-256759, No.6-136360, No. 6-188074, No. 6-192654, and No. 8-41452.

It is also known that these organic electroluminescence members aredriven by thin film transistors, for example, as described in JapaneseLaid-Open Patent Application No. 8-241048.

For driving the organic electroluminescence members by the thin filmtransistors, an organic electroluminescence member had to be mounted perdrain electrode pad of thin film transistor, however. Particularly, inthe case of the full-color display, the electroluminescence members ofthree kinds for electroluminescence emission of the three primarycolors, blue, green, and red, had to be patterned on a thin filmtransistor substrate. Since the thin film transistor surface had greaterunevenness than thin films of the electroluminescence members, it wasdifficult to pattern the thin films of electroluminescence members inhigh definition and high density. A further problem was thatproductivity was low, because the two types of functional devices, thetransistors and electroluminescence members, were concentrated on thethin film transistor substrate.

The organic electroluminescence members had a further problem thatlong-term application of dc voltage thereto shortened continuousemission time. Particularly, when they were driven by the thin filmtransistors disclosed in Japanese Laid-Open Patent Application No.8-241048 etc., there arose a problem that the dc voltage wascontinuously applied to the organic electroluminescence members, so asto promote deterioration of the organic electroluminescence members.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a device using organicelectroluminescence members suitable for full-color display of largescreen, solving the above problems, and a production method thereof.

Another object of the present invention is to provide anelectroluminescence apparatus capable of continuous emission over thelong term.

First, the present invention has the first feature of anelectroluminescence device having a transistor substrate comprising thinfilm transistors arranged along a plurality of rows and columns, gatelines provided for the respective rows, each gate line being a commonline for connecting gates of thin film transistors on one of the rows,source lines provided for the respective columns, each source line beinga common line for connecting sources of thin film transistors on one ofthe columns, drain electrode pads each connected to a drain of therespective thin film transistors, and capacitors connected to therespective drain electrode pads; and an electroluminescence substratecomprising pairs of electrodes and electroluminescence membersinterposed between the pairs of electrodes, which are arranged along aplurality of rows and columns, wherein said thin film transistorsubstrate and electroluminescence substrate are placed opposite to eachother so that the drain electrode pads and the electroluminescencemembers are opposed to each other, and wherein each drain electrode padis connected through an adhesive electric connection member to one of apair of electrodes.

Second, the present invention has the second feature of anelectroluminescence device having a transistor substrate comprisingfirst thin film transistors arranged along a plurality of rows andcolumns, gate lines provided for the respective rows, each gate linebeing a common line for connecting gates of first thin film transistorson one of the rows, source lines provided for the respective columns,each source line being a common line for connecting sources of firstthin film transistors on one of the columns, second thin filmtransistors each connected to a drain of the respective first thin filmtransistors, and capacitors connected to the respective second thin filmtransistors, wherein a gate of each second thin film transistor isconnected to the drain of the first thin film transistor, a drainelectrode pad is connected to a drain of each second thin filmtransistor, and a source of each second thin film transistor isconnected to one electrode of the capacitor; and an electroluminescencesubstrate comprising pairs of electrodes and electroluminescence membersinterposed between the pairs of electrodes, which are arranged along aplurality of rows and columns, wherein said thin film transistorsubstrate and electroluminescence substrate are placed opposite to eachother so that the drain electrode pads and the electroluminescencemembers are opposed to each other, and wherein each drain electrode padis connected through an adhesive electric connection member to one of apair of electrodes.

Third, the present invention has the third feature of a productionmethod of electroluminescence device comprising steps of: preparing atransistor substrate comprising thin film transistors arranged along aplurality of rows and columns, gate lines provided for the respectiverows, each gate line being a common line for connecting gates of thinfilm transistors on one of the rows, source lines provided for therespective columns, each source line being a common line for connectingsources of thin film transistors on one of the columns, drain electrodepads each connected to a drain of the respective thin film transistors,and capacitors connected to the respective drain electrode pads;preparing an electroluminescence substrate comprising pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes, which are arranged along a plurality of rows and columns;placing an adhesive electric connection member on at least one of thedrain electrode pads of the transistor substrate and theelectroluminescence members; and overlaying the thin film transistorsubstrate on the electroluminescence substrate opposite to each other sothat the drain electrode pads and the electroluminescence members areopposed to each other.

Fourth, the present invention has the fourth feature of a productionmethod of electroluminescence device comprising steps of: preparing atransistor substrate comprising thin film transistors arranged along aplurality of rows and columns, gate lines provided for the respectiverows, each gate line being a common line for connecting gates of thinfilm transistors on one of the rows, source lines provided for therespective columns, each source line being a common line for connectingsources of thin film transistors on one of the columns, drain electrodepads each connected to a drain of the respective thin film transistors,and capacitors connected to the respective drain electrode pads;preparing an electroluminescence substrate comprising pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes, which are arranged along a plurality of rows and columns;placing an adhesive electric connection member on at least one of thedrain electrode pads of the transistor substrate and theelectroluminescence members; placing an adhesive electric insulatoraround the periphery of the adhesive electric connection member on atleast one of the drain electrode pads of the transistor substrate andthe electroluminescence members; and overlaying the thin film transistorsubstrate on the electroluminescence substrate opposite to each other sothat the drain electrode pads and the electroluminescence members areopposed to each other.

Fifth, the present invention has the fifth feature of a productionmethod of electroluminescence device comprising steps of: preparing atransistor substrate comprising thin film transistors arranged along aplurality of rows and columns, gate lines provided for the respectiverows, each gate line being a common line for connecting gates of thinfilm transistors on one of the rows, source lines provided for therespective columns, each source line being a common line for connectingsources of thin film transistors on one of the columns, drain electrodepads each connected to a drain of the respective thin film transistors,and capacitors connected to the respective drain electrode pads;preparing an electroluminescence substrate comprising pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes, which are arranged along a plurality of rows and columns;placing an adhesive electric connection member on at least one of thedrain electrode pads of the transistor substrate and theelectroluminescence members; placing an adhesive electric insulatoraround the periphery of the adhesive electric connection member on atleast one of the drain electrode pads of the transistor substrate andthe electroluminescence members; overlaying the thin film transistorsubstrate on the electroluminescence substrate opposite to each other sothat the drain electrode pads and the electroluminescence members areopposed to each other; and evacuating a space between the thin filmtransistor substrate and the electroluminescence substrate and heatingthe adhesive electric connection member and adhesive electric insulatorto cure said member and insulator.

Sixth, the present invention has the sixth feature of anelectroluminescence apparatus having first switching devices arrangedalong a plurality of rows and columns, first wires provided for therespective rows, each first wire being a common wire for connectingfirst terminals of first switching devices on a row, second wiresprovided for the respective columns, each second wire being a commonwire connecting second terminals of first switching devices on a column,electroluminescence elements, each having one electrode connected to athird terminal of a first switching device, other electrode, and anelectroluminescence member interposed between the one and otherelectrodes, capacitors connected to the respective third terminals,second switching devices, each being provided between one electrode ofan electroluminescence element and a third terminal of a first switchingdevice, third wires connected to the one electrodes of theelectroluminescence elements, third switching devices disposed in thethird wires, and driving means, said driving means applying a first onsignal pulse for turning the first switching devices on, to a first wireof a predetermined row, applying a first off signal pulse for turningthe first switching devices off, to the first wires of the other rows,applying an information signal pulse of a forward bias voltage accordingto information, to the second wires in synchronism with the first onsignal pulse, and applying a second on signal pulse for turning thesecond switching devices on, to a control line for the second switchingdevices over a predetermined period in, before, or after application ofthe first on signal pulse for said predetermined row, thereby activatingwriting into each electroluminescence member on said row; then saiddriving means applying a second off signal pulse for turning the secondswitching devices off, to said control line after the predeterminedperiod, applying a third on signal pulse for turning the third switchingdevices on, to a control line for the third switching devices in,before, or after application of the second off signal pulse, therebyactuating reverse bias applying means set so that a reverse bias voltageis placed between said third wire and the other electrodes of theelectroluminescence elements.

Seventh, the present invention has the seventh feature of anelectroluminescence apparatus having first thin film transistorsarranged along a plurality of rows and columns, first wires provided forthe respective rows, each first wire being a common wire for connectinggates of first thin film transistors on a row, second wires provided forthe respective columns, each second wire being a common wire forconnecting sources of first thin film transistors on a column,electroluminescence elements, each having one electrode connected to adrain of a first thin film transistor, other electrode, and anelectroluminescence member interposed between the one and otherelectrodes, second thin film transistors connected at gates thereof,each being provided between said drain and one electrode of theelectroluminescence element, capacitors connected to the respectivedrains, first switching devices, each being provided between oneelectrode of an electroluminescence element and a drain electrode of asecond thin film transistor, third wires, each being connected to oneelectrode of an electroluminescence element, second switching devicesprovided in said third wires, and driving means, said driving meansapplying a first on signal pulse for turning the first thin filmtransistors on, to a first wire of a predetermined row, applying a firstoff signal pulse for turning the first thin film transistors off, to thefirst wires of the other rows, applying an information signal pulse of aforward bias voltage according to information, to the second wires insynchronism with the first on signal pulse, and applying a second onsignal pulse for turning the first switching devices on, to a controlline for the first switching devices over a predetermined period in,before, or after application of the first on signal pulse for saidpredetermined row, thereby activating writing into eachelectroluminescence member on said row; then said driving means applyinga second off signal pulse for turning the first switching devices off,to said control line after the predetermined period, and applying athird on signal pulse for turning the second switching devices on, to acontrol line for the third switching devices in, before, or afterapplication of the second off signal pulse, thereby actuating reversebias applying means set so that a reverse bias voltage is placed betweensaid third wire and the other electrodes of the electroluminescenceelements.

Eighth, the present invention has the eighth feature of anelectroluminescence apparatus having: switching devices arranged along aplurality of columns and rows, first wires provided for the respectiverows, each first wire being a common wire for connecting first terminalsof switching devices on a row, second wires provided for the respectivecolumns, each second wire being a common wire for connecting secondterminals of switching devices on a column, and electroluminescenceelements, each having one electrode connected to a third terminal of aswitching device, other electrode, and an electroluminescence memberinterposed between the one and other electrodes; and driving means, saiddriving means applying a scanning selection pulse for selecting at leastone row out of said plurality of rows, to a first wire corresponding tothe selected row, applying an information signal pulse for bringing theelectroluminescence members into a forward bias state according toinformation, to each of the second wires in synchronism with thescanning selection signal, and applying a bias voltage for bringing theelectroluminescence members into a reverse bias state, through a thirdwire to the electroluminescence members before start of application of anext scanning selection signal or a scanning selection signal thereafterto the first wire corresponding to said selected row.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of an EL device of the presentinvention;

FIG. 2 is a plan view of an EL pixel on the TFT substrate side, used inthe EL device of the present invention;

FIG. 3 is a sectional view along line 3—3 in FIG. 2;

FIG. 4 is a sectional view along line 4—4 in FIG. 2:

FIG. 5 is a plan view of an EL pixel on the EL substrate side, used inthe EL device of the present invention;

FIG. 6 is a sectional view along line 6—6 in FIG. 5;

FIG. 7 is a sectional view of an EL device of the present invention;

FIG. 8 is a sectional view of an evacuation system used in the method ofthe present invention;

FIG. 9 is an equivalent circuit diagram of another EL device of thepresent invention;

FIG. 10 is an equivalent circuit diagram of an EL apparatus used inanother embodiment of the present invention;

FIG. 11 is a timing chart of driving used in the present invention; and

FIG. 12 is a plan view of an EL substrate used in the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The electroluminescence members are preferably media that emit the threeprimary colors of blue, green, and red; particularly, organicelectroluminescence members.

The adhesive electric connection member is preferably a material inwhich electrically conductive particles are dispersed in an adhesive,and particularly preferably, a material containing a silane couplingagent.

It is preferable to employ a bond structure in which an adhesiveelectric insulator is disposed around the periphery of the adhesiveelectric connection member.

The thin film transistors are preferably of a polysilicon semiconductor,a crystal silicon semiconductor, a microcrystal silicon semiconductor,or an amorphous silicon semiconductor.

At least one electrode out of a pair of electrodes on either side of theelectroluminescence member is preferably a transparent electrode of ZnOhaving the texture structure.

The sixth, seventh, and eighth features of the present invention permitthe alternating voltage to be applied to the electroluminescenceelements in active matrix driving, thereby greatly extending thecontinuous emission time of the organic electroluminescence members overthe long term in particular.

The predetermined period used in the present invention is a period equalto ¼ to ¾ of one vertical scanning period (one frame period or one fieldperiod), preferably a period equal to ⅓ to ⅔ thereof, and particularlyoptimally, a period equal to approximately ½ thereof.

A time average voltage of the forward bias voltage and reverse biasvoltage used in the present invention is preferably set to approximatelyzero.

The present invention will be described by reference to the drawings. Inthe following description, the thin film transistor described above willbe denoted by “TFT” and the electroluminescence member by “EL.”

FIG. 1 is a schematic diagram of an active matrix four-terminal TFT-ELdevice. A device of each pixel includes two TFTs, a storage capacitor,and an EL device. A principal feature of the four-terminal type is thecapability of separating an addressing signal from an EL excitationsignal. The EL device is selected through the logic TFT (T1) andexcitation power to the EL device is controlled by the power TFT (T2).The storage capacitor makes it possible to keep the excitation powerstaying in the addressed EL device once selected. Thus the circuitpermits the EL device to operate at the duty cycle close to 100%,ignoring the time assigned to addressing.

Gate lines Y_(j), Y_(j+1) are preferably a lot of wires, for example 640wires or 1120 wires, to which gate pulses are applied in order. The gatepulses may be of either interlace scanning or non-interlace scanning.

Source lines X_(i), X_(i+1), X_(i+2) are preferably a lot of wires, forexample 840 wires or 1280 wires, to which information signal pulses of avoltage set according to image data are applied in synchronism with thegate pulses.

In the drawing REL designates red-emitting EL, GEL green-emitting EL,and BEL blue-emitting EL; information signal pulses of red are appliedto the source line X_(i), green information pulses to X_(i+1), and blueinformation pulses to X_(i+2). This achieves the full-color display.

FIG. 2 is a plan view to show a typical example of TFT substrate 3according to the present invention. TFT 1 corresponds to T1 of FIG. 1,TFT 2 to T2 of FIG. 1, capacitor 21 to Cs of FIG. 1, and drain electrodepad 22 to an electrode connected to the drain of T2 in each EL of FIG.1.

FIG. 3 is a sectional view along line 3—3 in FIG. 2. FIG. 4 is asectional view along line 4—4 in FIG. 2.

TFT 1 and TFT 2 used in the present invention have such transistorstructure that source bus 24 is connected to n⁺ polysilicon, the drainto n⁺ polysilicon, PECVD (plasma-enhanced CVD)-SiO₂ film 32 is placed asa gate insulating film on either side of the i-type polysilicon film,and the gate bus is connected to n⁺ polysilicon. Reference numeral 31refers to a base substrate.

The present invention is not limited to the aforementioned transistorstructure, but may adopt either the stagger structure or the coplanarstructure using amorphous silicon or microcrystalline siliconsemiconductors.

The present invention can be applied to MOS transistors of the SOI(silicon on insulator) structure using crystal silicon.

The capacitor Cs is composed of a pair of capacitor electrodes 41 and42, and SiO₂ film 33 interposed between the pair of capacitor electrodesas shown in FIG. 4. The capacitor electrode 41 is a film formed of Al orthe like and connected to the ground bus 25, while the capacitorelectrode 42 is a film formed of n⁺ polysilicon and connected to thedrain of TFT 2.

The gate bus 23 and source bus 24 are preferably chromium/aluminumlayered wires.

A passivation film 34 is preferably a film of silicon nitride formed byplasma CVD.

A metal film of aluminum, silver, or the like can be used as the drainelectrode pad 22 in order to provide it with reflecting performance, buta transparent conductive film such as ITO or ZnO may also be applied.

FIG. 5 is a plan view of EL substrate 6 used in the present inventionand FIG. 6 is a sectional view along line 6—6 in FIG. 5.

The EL substrate 6 is composed of glass substrate 61, a pair ofelectrodes disposed on the glass substrate 61, i.e., a transparentelectrode 51 and an EL electrode pad 62 of aluminum or the like forminga reflecting surface, and the EL interposed between the pair ofelectrodes.

The EL 52 is preferably an organic EL; particularly, either one of thoseforming REL, GEL, and BEL is placed.

Specific examples of REL, GEL, and BEL are listed below, but it is notedthat the present invention is not intended to be limited to theseexamples and that inorganic ELs can also be applied instead of theorganic ELs.

Materials applicable as the organic ELs in the present invention arethose disclosed, for example, in Scozzafava's EPA 349,265 (1990); Tang'sU.S. Pat. No. 4,356,429; VanSlyke et al.'s U.S. Pat. No. 4,539,507;VanSlyke et al.'s U.S. Pat. No. 4,720,432; Tang et al.'s U.S. Pat. No.4,769,292; Tang et al.'s U.S. Pat. No. 4,885,211; Perry et al.'s U.S.Pat. No. 4,950,950; Littman et al.'s U.S. Pat. No. 5,059,861; VanSlyke'sU.S. Pat. No. 5,047,687; Scozzafava et al.'s U.S. Pat. No. 5,073,446;VanSlyke et al.'s U.S. Pat. No. 5,059,862; VanSlyke et al.'s U.S. Pat.No. 5,061,617; VanSlyke's U.S. Pat. No. 5,151,629; Tang et al.'s U.S.Pat. No. 5,294,869; Tang et al.'s U.S. Pat. No. 5,294,870. The EL layeris comprised of an organic hole injection and transporting zone incontact with the anode, and an electron injection and transporting zonewhich forms a junction with the organic hole injection and transportingzone. The hole injection and transporting zone is made of a singlematerial or plural materials, and comprises a hole injection layer incontact with the anode and a contiguous hole transporting layerinterposed between the hole injection layer and the electron injectionand transporting zone. Similarly, the electron injection andtransporting zone is made of a single material or plural materials, andcomprises an electron injecting layer in contact with the cathode and acontiguous electron transporting layer that is interposed between theelectron injection layer and the hole injection and transporting zone.Recombination of hole and electron and luminescence occurs in theelectron injection and transporting zone adjacent to the junctionbetween the electron injection and transporting zone and the holeinjection and transporting zone. Compounds forming the organic EL layerare deposited typically by vapor deposition, but they may also bedeposited by other conventional technologies.

In a preferred embodiment the organic material of the hole injectionlayer has the general formula below.

In the above formula, Q represents N or C-R (where R is hydrogen, alkyl,or halogen), M is a metal, a metal oxide, or a metal halide, and T1, T2represent hydrogen or both make up an unsaturated six-membered ringcontaining a substituent such as alkyl or halogen. A preferred alkylpart contains approximately one to six carbon atoms, while phenylcomposes a preferred aryl part.

In a preferred embodiment the hole migration layer is aromatic tertiaryamine. A preferred subclass of the aromatic tertiary amine containstetraaryldiamine having the following formula.

In the above formula Are represents arylene, n an integer from 1 to 4,and Ar, R₇, R₈, R₉ each an aryl group selected. In a preferredembodiment the luminescence, electron injection and transporting zonecontains a metal oxinoid compound. A preferred example of the metaloxinoid compound has the general formula below.

In this formula R₂ to R₇ represent substitutional possibilities. Inanother preferred embodiment the metal oxinoid compound has thefollowing formula.

In the above formula R₂ to R₇ are those defined above, and L1 to L5collectively contain twelve or fewer carbon atoms, each independentlyrepresenting hydrogen or a hydrocarbon group of 1 to 12 carbon atoms,wherein L1, L2 together, or L2, L3 together can form a united benzoring. In another preferred embodiment the metal oxinoid compound has thefollowing formula.

In this formula R₂ to R₆ represent hydrogen or other substitutionalpossibilities. The above examples only represent some preferred organicmaterials simply used in the electroluminescence layer. Those are notdescribed herein for the intention of limiting the scope of the presentinvention, but generally indicate the organic electroluminescence layer.As understood from the above examples, the organic EL materials includethe coordinate compounds having the organic ligand.

In the next process stage the EL anode 62 is deposited on the surface ofdevice. The EL anode can be made of any electrically conductivematerial, but it is preferably made of a material having the workfunction of 4 eV or less (see the Tang's U.S. Pat. No. 4,885,211).Materials having a low work function are preferable for the anode. It isbecause they readily release electrons into the electron transportinglayer. Metals having the lowest work function are alkali metals, butinstability thereof in the air makes use thereof impractical undercertain conditions. The cathode material is deposited typically bychemical vapor deposition, but other suitable deposition technologiescan also be applied. It was found that a particularly preferred materialfor the EL cathode is a magnesium: silver alloy of 10:1 (in an atomicratio). Preferably, the cathode layer is applied as a continuous layerover the entire surface of display panel. In another embodiment the ELcathode is comprised of a lower layer of a metal with a low workfunction adjacent to the organic electron injection and transportingzone, and a protective layer overlaid on the metal with the low workfunction to protect the metal with the low work function from oxygen andhumidity.

Typically the cathode material is opaque, while the anode material istransparent, so that light passes through the anode material. However,in an alternative embodiment light is emitted through the cathode ratherthan the anode. In this case the cathode must be light transmissive andthe anode may be opaque. A practical balance light transmission andtechnical conductance is typically in the thickness range of 5 to 25 nm.

In the present invention a plastic film can be used instead of the glasssubstrate 61 used for the EL substrate 6, and ITO or ZnO can be used forthe transparent electrode 51.

In order to increase the surface area of EL 52, the texture structurehaving fine unevenness in the surface thereof can be employed for thetransparent electrode 51. The preferred texture structure can be formedby a sputter process under such condition of relatively high temperaturethat the substrate temperature during deposition of ZnO is 250° C. to300° C.

The area except for EL 52 in the transparent electrode 51 can beprovided with a shield mask (not illustrated). The shield mask in thiscase can be a metal film such as an aluminum film or a chromium film, ora chromium oxide film or an aluminum oxide film for preventingoccurrence of reflected light due to these metal films, singly ordeposited on the metal film.

Since the metal film substantially decreases the resistance of thetransparent electrode 51, it is preferred to deposit the metal film onthe transparent electrode 51 and further lay the metal oxide filmthereon.

The transparent electrode 51 is set to the earth or a predetermined dcvoltage during driving of the EL devices of the present invention.

FIG. 7 is a sectional view of an EL device according to the presentinvention. The EL device is constructed in such structure that TFTsubstrate 3 and EL substrate 6 are opposed to each other, whereby the ELelectrode pad 62 on the EL substrate 6 side and the drain electrode pad22 on the TFT substrate 3 side are opposed, and that electricalconnection is achieved between the both electrodes by adhesive electricconnection member 71.

The adhesive electric connection member 71 is obtained by using anelectrically conductive adhesive in which electrically conductiveparticles such as carbon particles, silver particles, or copperparticles are dispersed in an epoxy-based or phenol-based thermosettingadhesive, applying it to a predetermined position of the EL substrate 6or the TFT substrate 3, or the both by a screen printing method, anoffset printing method, or a dispenser applying method, and drying it.

The electrically conductive adhesive described above may contain asilane coupling agent such asN-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane,N-(2-aminoethyl)-3-aminopropyltrimethoxysilane,3-aminopropyltrimethoxysilane, 3-aminopropylmethyldiethoxysilane, or3-glycidoxypropyltrimethoxysilane, for enhancing interfacial adhesivestrength.

Another example of the adhesive electric connection member 71 is solder.

An adhesive electric insulator 72 is provided around the periphery ofthe adhesive electric connection member 71 described above. The adhesiveelectric insulator 72 is obtained by applying an epoxy-based orphenol-based insulative adhesive to a predetermined position of the ELsubstrate 6 or the TFT substrate, or the both by a method such as theoffset printing method, the screen printing method, or the dispenserapplying method, and drying it. On this occasion, in applying theinsulative adhesive and the conductive adhesive, it is preferred toemploy a production method for laying the insulative adhesive on eitherone of the EL substrate 6 and the TFT substrate 3 and laying theconductive adhesive on the other substrate without the insulativeadhesive.

In the present invention, the above-stated adhesive insulator 72 can bereplaced by an insulator having no adhesive strength, for example anorganic solvent, and particularly, a high-boiling-point organic solventor a liquid insulator of liquid crystal such as nematic liquid crystal,cholesteric liquid crystal, or smectic liquid crystal.

The aforementioned adhesive insulator 72 or non-adhesive insulator mayalso contain such a coloring agent as a color pigment or a paint inorder to be also provided with the shield effect.

The EL device of the present invention can be produced by employing amethod for applying the conductive adhesive onto the drain electrode pad22 of TFT substrate 3, for example, by the offset printing method,applying the insulative adhesive to the area (around the periphery ofthe EL electrode pad 62) except for the EL electrode pad 62 of the ELsubstrate 6, for example, by the offset printing method, overlaying theEL substrate 6 on the TFT substrate 3 so that the drain electrode pad 22and the EL electrode pad 62 are opposed to each other, then evacuatingthe air of the space between the TFT substrate 3 and the EL substrate 6by an ordinary method, and applying pressure and heat to the bothsubstrates 3 and 6 to fix them in adhesion.

FIG. 8 shows an evacuating device used on the occasion of evacuation ofthe air of the space described above. With keeping the TFT substrate 3and the EL substrate 6 in a superimposed state, they are placed on stage81, they are covered as illustrated by sheet 83 of plastic film or thelike placed between a pair of O-rings 82 and 82 fixed in the periphery,and thereafter vacuum pump 84 is actuated to evacuate the air of theinside of the sheet 83.

FIG. 9 is an equivalent circuit diagram of another EL device of thepresent invention.

FIG. 10 and FIG. 11 illustrate an embodiment associated with the sixth,seventh, and eighth features of the present invention.

G₁, G₂, . . . , G_(n) (n gate scanning lines) are gate on pulses(high-level voltage) successively applied to gate lines connected to thegates of switching devices Tr₁ comprised of thin film transistors, andwrite rows are selected by successive application of the gate on pulses.The gate on pulses G₁, G₂, . . . , G_(n) being scanning selectionsignals may be applied either by the interlace scanning method or by thenon-interlace scanning method. In the case of the driving by theinterlace scanning method, scanning may be the interlace scanning withinterlacing of one line or with interlacing of two or more lines.

S₁₁, S₂₁,. . . , S_(n1) are control pulses for controlling the emissiontime of EL, which are applied to the gates of switching devices Tr₃comprised of thin film transistors during a predetermined emissionperiod. The control pulses are applied thereto in, before, or afterapplication of the gate on pulse (high-level voltage) of G₁, G₂, . . . ,G_(n), and the ELs this time are set in the forward bias state.

S₁₂, S₂₂, . . . , S_(n2) interrupt emission of EL and, in order to applya reverse bias voltage to the ELs through bias control line RB₁, RB₂, .. . , RB_(n) instead, they are applied as gate on pulses (high-levelvoltage) to the gates of switching devices Tr₄ comprised of thin filmtransistors, in, before, or after application of a gate off pulse(low-level voltage) to the switching devices Tr₃.

The bias control lines RB₁, RB₂, . . . , RB_(n) are preferably placed onthe EL substrate 6, as shown in FIG. 12. In this case, the bias controllines RB₁, RB₂, . . . , RB_(n) are arranged in such a way that paralleltransparent electrodes 511, 512, . . . , 51 _(n) are provided for therespective rows of plural switching devices Tr₁ being active matrixdriving devices and each transparent electrode 511, 512, . . . , 51 _(n)is switched independently through gate array 121 to either one of theearth and reverse bias voltage V_(R). Based on this arrangement, the ELsare driven on the occasion of emission of EL so that the potentialthereof is set in the forward bias state.

In FIG. 10 D₁, D₂, D₃, D₄, . . . , D_(m) (m information lines) supplyinformation signal pulses according to information, applied according tothe information to the sources of the switching devices Tr₁ on thecolumns, and set the forward bias state for the ELs (BELs, GELs, RELs).

According to the sixth, seventh, and eighth features of the presentinvention, the alternating voltage was applied to each EL and displaywas achieved by continuous emission over the long term.

The present invention is suitably applicable to the light-emittingdisplay layer, but the invention can also be applied in place of lasersignals, LED signals, or liquid crystal shutter array signals (solidstate scanner signals) used in a light signal generator forelectrophotographic printer.

The present invention permitted the EL pixels with high definition, highdensity, and long life to be produced across a large area and with highproductivity.

The present invention achieved high-luminance light emission of EL andprovided the EL devices, based on the high productivity, thus achievingthe EL color display with high definition, high density, and continuoushigh-luminance emission over the long term.

Further, the present invention provided the EL color display achievingstability against impact and display stability in long-term use.

What is claimed is:
 1. An electroluminescence device having a transistorsubstrate comprising a first substrate, thin film transistors arrangedalong a plurality of rows and columns on said first substrate, gatelines provided for the respective rows on said first substrate, eachgate line being a common line for connecting gates of thin filmtransistors on one of the rows, source lines provided for the respectivecolumns, each source line being a common line for connecting sources ofthin film transistors on one of the columns on said first substrate,drain electrode pads each connected to a drain of the respective thinfilm transistors on said first substrate, and capacitors connected tothe respective drain electrode pads on said first substrate; and anelectroluminescence substrate comprising a second substrate, pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes on said second substrate, which are arranged along aplurality of rows and columns, wherein said thin film transistorsubstrate and electroluminescence substrate are placed opposite to eachother so that the drain electrode pads and the electroluminescencemembers are opposed to each other, and wherein each drain electrode padis connected through an adhesive electric connection member to one of apair of electrodes of said electroluminescence member.
 2. Theelectroluminescence device according to claim 1, wherein saidelectroluminescence members comprise media that emit the three primarycolors of blue, green and red.
 3. The electroluminescence deviceaccording to claim 1, wherein said electroluminescence members comprisemedia of organic substance that emit the three primary colors of blue,green and red.
 4. The electroluminescence device according to claim 1,wherein said adhesive electric connection member is a material in whichelectrically conductive particles are dispersed in an adhesive.
 5. Theelectroluminescence device according to claim 1, wherein said adhesiveelectric connection member is a material in which electricallyconductive particles are dispersed in an adhesive and which contains asilane coupling agent.
 6. The electroluminescence device according toclaim 1, wherein an electric insulator is disposed around the peripheryof said adhesive electric connection member.
 7. The electroluminescencedevice according to claim 1, wherein an adhesive electric insulator isdisposed around the periphery of said adhesive electric connectionmember.
 8. The electroluminescence device according to claim 1, whereinan electric insulator containing a coloring agent is disposed around theperiphery of said adhesive electric connection member.
 9. Theelectroluminescence device according to claim 1, wherein an electricinsulator of a liquid form is disposed around the periphery of saidadhesive electric connection member.
 10. The electroluminescence deviceaccording to claim 1, wherein said thin film transistors have apolysilicon semiconductor layer.
 11. The electroluminescence deviceaccording to claim 1, wherein said thin film transistors have anamorphous silicon semiconductor or a microcrystalline siliconsemiconductor.
 12. The electroluminescence device according to claim 1,wherein said thin film transistors have a crystal silicon semiconductor.13. The electroluminescence device according to claim 1, wherein atleast one electrode out of the pair of electrodes on either side of eachsaid electroluminescence member is a transparent electrode having thetexture structure.
 14. The electroluminescence device according to claim1, wherein at least one electrode out of the pair of electrodes oneither side of each said electroluminescence member is a transparentelectrode of ZnO having the texture structure.
 15. Anelectroluminescence device having a transistor substrate comprising afirst substrate, first thin film transistors arranged along a pluralityof rows and columns on said first substrate, gate lines provided for therespective rows on said first substrate, each gate line being a commonline for connecting gates of first thin film transistors on one of therows, source lines provided for the respective columns on said firstsubstrate, each source line being a common line for connecting sourcesof first thin film transistors on one of the columns, second thin filmtransistors each connected to a drain of the respective first thin filmtransistors on said first substrate, and capacitors connected to therespective second thin film transistors on said first substrate, whereina gate of each second thin film transistor is connected to the drain ofthe first thin film transistor, a drain electrode pad is connected to adrain of each second thin film transistor, and a source of each secondthin film transistor is connected to one electrode of the capacitor; andan electroluminescence substrate comprising a second substrate, pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes on said second substrate, which are arranged along aplurality of rows and columns, wherein said thin film transistorsubstrate and electroluminescence substrate are placed opposite to eachother so that the drain electrode pads and the electroluminescencemembers are opposed to each other, and wherein each drain electrode padis connected through an adhesive electric connection member to one of apair of electrodes of said electroluminescence member.
 16. Theelectroluminescence device according to claim 15, wherein saidelectroluminescence members comprise media that emit the three primarycolors of blue, green and red.
 17. The electroluminescence deviceaccording to claim 15, wherein said electroluminescence members comprisemedia of organic substance that emit the three primary colors of blue,green and red.
 18. The electroluminescence device according to claim 15,wherein said adhesive electric connection member is a material in whichelectrically conductive particles are dispersed in an adhesive.
 19. Theelectroluminescence device according to claim 15, wherein said adhesiveelectric connection member is a material in which electricallyconductive particles are dispersed in an adhesive and which contains asilane coupling agent.
 20. The electroluminescence device according toclaim 15, wherein an adhesive electric insulator is disposed around theperiphery of said adhesive electric connection member.
 21. Theelectroluminescence device according to claim 15, wherein said thin filmtransistors have a polysilicon semiconductor layer.
 22. Theelectroluminescence device according to claim 15, wherein said thin filmtransistors have an amorphous silicon semiconductor or amicrocrystalline silicon semiconductor.
 23. The electroluminescencedevice according to claim 15, wherein said thin film transistors have acrystal silicon semiconductor.
 24. A production method ofelectroluminescence device comprising steps of: preparing a transistorsubstrate comprising a first substrate, thin film transistors arrangedalong a plurality of rows and columns on said first substrate, gatelines provided for the respective rows on said first substrate, eachgate line being a common line for connecting gates of thin filmtransistors on one of the rows, source lines provided for the respectivecolumns on said first substrate, each source line being a common linefor connecting sources of thin film transistors on one of the columns,drain electrode pads each connected to a drain of the respective thinfilm transistors on said first substrate, and capacitors connected tothe respective drain electrode pads on said first substrate; preparingan electroluminescence substrate comprising a second substrate, pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes on said second substrate, which are arranged along aplurality of rows and columns; placing an adhesive electric connectionmember on at least one of the drain electrode pads of the transistorsubstrate and the electroluminescence members; and overlaying the thinfilm transistor substrate on the electroluminescence substrate oppositeto each other so that the drain electrode pads and theelectroluminescence members are opposed to each other.
 25. Theproduction method of electroluminescence device according to claim 24,wherein said electroluminescence members comprise media that emit thethree primary colors of blue, green and red.
 26. The production methodof electroluminescence device according to claim 24, wherein saidelectroluminescence members comprise media of organic substance thatemit the three primary colors of blue, green and red.
 27. The productionmethod of electroluminescence device according to claim 24, wherein saidadhesive electric connection member is a material in which electricallyconductive particles are dispersed in an adhesive.
 28. The productionmethod of electroluminescence device according to claim 27, wherein saidadhesive electric connection member is a material in which theelectrically conductive particles are dispersed in the adhesive andwhich contains a silane coupling agent.
 29. A production method ofelectroluminescence device comprising steps of: preparing a transistorsubstrate comprising a first substrate, thin film transistors arrangedalong a plurality of rows and columns on said first substrate, gatelines provided for the respective rows on said first substrate, eachgate line being a common line for connecting gates of thin filmtransistors on one of the rows source lines provided for the respectivecolumns on said first substrate, each source line being a common linefor connecting sources of thin film transistors on one of the columns,drain electrode pads each connected to a drain of the respective thinfilm transistors on said first substrate, and capacitors connected tothe respective drain electrode pads on said first substrate; preparingan electroluminescence substrate comprising a second substrate, pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes on said second substrate, which are arranged along aplurality of rows and columns; placing an adhesive electric connectionmember on at least one of the drain electrode pads of the transistorsubstrate and the electroluminescence members; placing an adhesiveelectric insulator around the periphery of the adhesive electricconnection member on at least one of the drain electrode pads of thetransistor substrate and the electroluminescence members; and overlayingthe thin film transistor substrate on the electroluminescence substrateopposite to each other so that the drain electrode pads and theelectroluminescence members are opposed to each other.
 30. A productionmethod of electroluminescence device comprising steps of: preparing atransistor substrate comprising a first substrate, thin film transistorsarranged along a plurality of rows and columns on said first substrate,gate lines provided for the respective rows on said first substrate,each gate line being a common line for connecting gates of thin filmtransistors on one of the rows, source lines provided for the respectivecolumns on said first substrate, each source line being a common linefor connecting sources of thin film transistors on one of the columns,drain electrode pads each connected to a drain of the respective thinfilm transistors on said first substrate, and capacitors connected tothe respective drain electrode pads on said first substrate; preparingan electroluminescence substrate comprising a second substrate, pairs ofelectrodes and electroluminescence members interposed between the pairsof electrodes on said second substrate, which are arranged along aplurality of rows and columns; placing an adhesive electric connectionmember on at least one of the drain electrode pads of the transistorsubstrate and the electroluminescence members; placing an adhesiveelectric insulator around the periphery of the adhesive electricconnection member on at least one of the drain electrode pads of thetransistor substrate and the electroluminescence members; overlaying thethin film transistor substrate on the electroluminescence substrateopposite to each other so that the drain electrode pads and theelectroluminescence members are opposed to each other; and evacuating aspace between the thin film transistor substrate and theelectroluminescence substrate and heating the adhesive electricconnection member and adhesive electric insulator to cure said memberand insulator.